Moore's law and VLSI fabrication process
Moore's law:
Definition:
- Moore's Law refers to Moore's perception that number of transistors on a microchip doubles every two years, though the price of computers is halved.
- Moore's Law states that we will expect the speed and capability of our computers to extend every number of years, and that we pays less for them.
History of Moore's law:
The term "Morey's law" was coined in 1970 by a Caltech professor, VLSI pioneer, and businessman Carver Mead based on a statement by Gordon E. Moore. Predictions of a similar increase in computer power were present years ago. Alan Turing in his 1950 paper Computing Machinery and Intelligence predicted that by the end of the millennium, we would have "109 high-end computing computers," today we would call "128 megabytes." Moore may have heard Douglas Engelbart, a co-creator of the modern computer mouse, discuss the expected reduction in the size of the circuit included in the 1960 speech. The New York Times published August 31, 2009, thanking Engelbart for making this prediction in 1959.
1965: Low cost of living increases by almost 2 percent per year . Indeed in the short term this rate can be expected to continue, otherwise it will increase. In the long run, the rate of rise is very certain, although there is no reason to believe that it will not last for at least a decade. That means that in 1975, the total number of components of a combined low-cost circuit will be 65,000. I believe that such a large circuit can be built on one waist. Morell gradually changed the structure of the law over time, in retrospect to strengthen the apparent accuracy of his law. Most notably, in 1975, Moore changed his appearance and doubled every two years. Despite popular misconceptions, he insists that he did not predict recurrence "every 18 months." However, David House, who works with Intel, has been working on increasing transistor performance to conclude that integrated circuits will double in operation every 18 months. In April 2005, Intel donated US $ 10,000 to purchase a copy of the first edition of Electronics Magazine in which Morey's story appeared. An engineer living in the United Kingdom was the first to obtain a copy and give it to Intel.
Gordon Moore:
Born: Gordon Earle Moore, January 3, 1929 ,San Francisco, California, U.S.
Education: San Jose State College, University of California, Berkeley (BS),California Institute of Technology (MS, PhD).
Known for: Intel, Moore's law, Gordon and Betty Moore Foundation.
Awards: National Medal of Technology (1990), John Fritz Medal (1993),IEEE Founders Medal (1997),Computer History Museum Fellow (1998), Othmer Gold Medal(2001), Perkin Medal (2004),Nierenberg Prize (2006),IEEE Medal of Honor(2008),Presidential Medal of Freedom Scientific career.
Fields: Entrepreneur, Electrical engineering.
Institutions: Intel, Gordon and Betty Moore Foundation, California Institute of Technology Johns Hopkins University Applied Physics Laboratory.
Why does the Moore's law exist ?
- Competition between manufacturers.
- Successive technologies providing better design tools.
- Customer demand for better products.
- Man’s constant struggle to advance knowledge.
Advancement:
⇒⇒ 
- The power of many digital technologies is strongly linked to Moore's law: increase speed, Memory capacity, sensors, and pixel size on digital cameras.
- All of this is improved (probably) by definition values.
- The development of the concept has greatly increased the impact of digital electronics in almost every part of the global economy.
- The significant growth of Moore's Law will continue beyond the use of integrated circuits in technology that will lead to technological unity.
Number of transistor on IC
fig: Moore's law growth graph
As can be seen in the picture, the number of transistors doubled every two years from 1971 to 2018 according to Moore's law. Over the past 40 years there has been a 20-fold increase which means a million-fold increase in the Integrated Circuit.
Although Moore's law focuses directly on the rate of increase in the number of transistors in integrated circuits, this general trend of interpreter growth has been seen in many other aspects of computer and information technology.
Trends
One of the most important engineering challenges for nanoscale transistors is the construction of gates. As the size of the device decreases, controlling the current flow at a smaller station becomes more difficult. Compared to FinFET, which has gate particles on three sides of the channel, the building next to MOSFET (GAAFET) has better gate control.
- The MOSFET round gate was first shown in 1988, by a team of Toshiba researchers led by Fujio Masuoka, who demonstrated the nanowire GAAFET which he called the "surrounding gate transistor" (SGT). Masuoka, better known as the founder of flash memory, later left Toshiba and founded Unisantis Electronics in 2004 to research technology around the gates and Tohoku University.
- In 2006, a team of Korean researchers from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center developed a 3 nm transistor, the smallest tool in the world, based on FinFET technology.
- In 2010, researchers at the Tyndall National Institute in Cork, Ireland, announced a non-contact transistor. A control gate surrounded by silicon nanowire can control the passage of electrons without the use of junctions or doping. They say that this can be produced on a scale of 10 nanometers using existing techniques.
- In 2011, researchers at the University of Pittsburgh announced the construction of a single transistor, 1.5 nanometer in diameter, made of oxide. Three “wires” meet in the central “island” that can accommodate one or two electrons. The electron tunnel runs from one wire to another across the island. The conditions of the third wire cause different advanced properties including the power of the transistor to function as a solid state memory. Nanowire transistors can encourage the construction of very small computers.
- In 2012, a team of researchers at the University of New South Wales announced the construction of the first active transistor consisting of a single atom placed directly on a silicon crystal (not just taken from a large sample of random transistors). Moore's law predicted that this milestone would be reached on IC boards on board by 2020.
- In 2015, IBM demonstrated 7 node chips with silicon-germanium transistors manufactured using EUVL. The company believes that this transistor pressure can be four times higher than the current 14 nm chips.
- Samsung and TSMC plan to generate 3 nm GAAFET in 2021-2022 Note that node names, such as 3 nm, have no relation to the body size of the transistors.
- A team of Toshiba researchers including T.Imoto, M. Matsui and C. Takubo launched the process of tying the "System Block Module" for the production of 3D IC packages in 2001. In April 2007, Toshiba introduced the eight-layer 3D IC, 16 GB THGAM embedded NAND chip memory card composed of eight 2 GB NAND flash chips. In September 2007, Hynix introduced a 24-3D 3D IC layer, a 16 GB flash memory chip made of 24 pages of NAND flash chips using the binding process.
- V-NAND, also known as 3D NAND, allows flash memory cells to be positioned vertically using a flash charging technology originally introduced by John Szedon in 1967, which greatly increases the number of transistors on a flash memory chip. The 3D NAND was first announced by Toshiba in 2007. V-NAND was first commercialized by Samsung Electronics in 2013.
- In 2008, HP Labs researchers announced a working memory, which is the fourth major element of its previously thought-based circuit. The distinctive features of the memristor's
allow for the creation of small and efficient electrical devices.
- In 2014, biologists at Stanford University developed a circuit imitated in the human brain. Sixteen "Neurocore" chips mimic a million neurons and billions of synaptic connections, which claim to be 9,000 times faster and more powerful than a standard PC.
- In 2015, Intel and Micron announced the 3D XPoint, a non-volatile memory that claims to be much faster at the same mass compared to NAND. Production scheduled to start in 2016 has been delayed until the second half of 2017.
- In 2017, Samsung combined its V-NAND technology with eUFS 3D IC stacking to produce a 512 GB chip memory, killing 64 V-NANDs 64. layer V-NAND dies, as well as quad-level cell technology (QLC) (4-bit transistor each), equivalent to 2 trillion transistors, the highest transistor number for any IC chip.
- By 2020, Samsung Electronics plans to produce 5 nm nodes, using FinFET technology and EUV technology.
Is Moore’s Law Dead or Alive?
Since the 2000s, there has been an ongoing debate within the semiconductor community over whether Moore's Law will continue to rule, or whether progress will leap as certain body limits reach the process of doing little. In early 2019, Nvidia chief executive Jensen Huang announced that Moore's Law was no longer possible. In terms of what it deserves, Intel still claims that chip technology is always finding a way to improve - while TSMC recently said the law is alive and well. Regardless of who is right, Moore's Law has held the truth for almost 50 years, and its effects will continue to be felt in almost every aspect of life and society.
References
1. See, for example, D. MacKenzie, Knowing
Machines, MIT Press, 1996, for a discussion of
Moore’s law as a self-fulfilling prophecy.
2. M.S. Malone, “Chips Triumphant,” Forbes ASAP,
Feb. 1996, p. 70.
3. G.E. Moore, “Progress in Digital Electronics,”
Technical Digest of the Int’l Electron Devices Meeting, IEEE Press, 1975, p. 13.
4. M.S. Malone, “Chips Triumphant,” p. 68. Eighteen months is the standard time given in recent
publications, both technical and nontechnical.
See, for example, T. Lewis, “The Next 10,0002
Years: Part II,” Computer, May 1996), p. 78.
5. P.K. Bondyopadhyay, “Moore’s Law Governs the
Silicon Revolution,” Proc. IEEE, vol. 86, no. 1, Jan.
1998, pp. 78-81.
6. R. Schaller, “Moore’s Law: Past, Present, and
Future,” IEEE Spectrum, June 1997, pp. 52-59.
7. D. McKenzie, Knowing Machines, chapter 3, pp.
49-66.
8. Although the 1965 and 1975 papers are generally
considered the critical papers on Moore’s law, I
have included Moore’s 1995 work since it contains
the technical material on which he has based all of
his recent interviews and presentations.
9. G.E. Moore, “Cramming More Components onto
Integrated Circuits,” Electronics, vol. 38, no. 8,
1965, pp. 114–117.
10. G. Moore, personal interview with author, 17
Dec. 1996.
